Dielectrics

Memristive properties of Cu/(Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$/ZrO$_2$(Y)/Cr/Cu/Cr capacitor structures

I. V. Babkina^a, A. V. Sitnikov^ab, Yu. E. Kalinin^a, A. E. Nikonov^a, A. V. Ampilogov^a, A. R. Shakurov^a, V. V. Ryl'kov<sup>b

a</sup> Voronezh State Technical University
^b National Research Centre "Kurchatov Institute", Moscow

Abstract: The article presents the results of studying the memristive properties of nanocomposite (NC) structures Cu/NC/ZrO$_2$(Y)/Cr/Cu/Cr/sitall based on NC (Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$. It is shown that the use of a dielectric layer of ZrO$_2$(Y) and NC allows achieving practically significant memristive characteristics: resistive switching voltage (RSV) up to 2.5 V, resistance ratio $R_{\text{off}}/R_{\text{on}}$ more than 10. In this case, a multilevel nature of RS is realized with the temporary stability of induced resistive states of at least 1 h. Memristive structures demonstrate an insignificant spread of RS voltages from cycle to cycle (about 5%). At the same time, there is no need for a sample forming process to achieve stable RS. The presented results demonstrate the possibility of creating new memristive structures with a multifilament switching mechanism using NC with a metal phase concentration below the percolation threshold as one of the electrodes.

Keywords: resistive switching, memristors, nanocomposite, zirconium oxide.

Received: 03.04.2025
Revised: 30.04.2025
Accepted: 01.05.2025

DOI: 10.61011/FTT.2025.05.60744.69-25

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