Semiconductors

Optical properties of indium-doped Hg$_{0.3}$Cd$_{0.7}$Te epitaxial films

M. S. Ruzhevich^a, K. J. Mynbaev^b, N. L. Bazhenov^b, M. V. Dorogov^a, V. S. Varavin^c, V. G. Remesnik^c, I. N. Uzhakov^c, N. N. Mikhailov<sup>c

a</sup> St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Ioffe Institute, St. Petersburg
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The article presents the results of studying the optical properties of Hg$_{0.3}$Cd$_{0.7}$Te films grown by molecular beam epitaxy and doped with indium. Optical reflection and transmission methods, as well as photoluminescence, are used for the study. According to the photoluminescence data, the introduction of indium lead to the formation of a donor level with an ionization energy of 10–12 meV. Films with an indium concentration 10$^{16}$–10$^{17}$ cm$^{-3}$ showed the stability of their optical properties during thermal annealing, including films in the HgTe/Hg$_{0.3}$Cd$_{0.7}$Te heterocomposition. At indium concentrations $>$ 10$^{18}$ cm$^{-3}$, this stability is lost due to the interaction of the impurity with intrinsic defects.

Received: 20.05.2025
Revised: 22.05.2025
Accepted: 22.05.2025

DOI: 10.61011/FTT.2025.05.60742.131-25

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