Abstract:
The dynamics of MgO complex formation during magnesium diffusion in Czochralskii-grown silicon with oxygen content of $\sim$ 3 $\cdot$ 10$^{17}$ cm$^{-3}$ has been studied. MgO complexes were found to form only at temperatures above 1100$^\circ$C. At lower temperatures, magnesium atoms are in a bound state, presumably in the form of particles, or Mg$_2$Si phase. The formation of complexes occurs after the dissociation of Mg$_2$Si into Mg and Si at higher temperatures. Thus, the experimental results confirm the assumption that the electrically inactive component of the magnesium content in the crystal is the Mg$_2$Si compound.
Fulltext:
PDF file (145 kB)