This article is cited in 2 papers

Magnetism

Magnetoelastic interaction in a ferromagnet-multiferroic system

D. L. Vinokurov

MIREA — Russian Technological University, Moscow

Abstract: The contribution of the elastic interaction to the total interaction energy of a ferromagnetic nanolayer with a BiFeO$_3$ multiferroic nanolayer has been investigated. It has been shown that this contribution amounts to less than 10% and the main contribution to the energy comes from the exchange interaction. The lower limit for the minimum size of a bit of magnetoresistive memory with electric-field writing (magnetoelectric random-access memory (MERAM)), which is associated with the existence of a superparamagnetic limit, has been found. If the writing is based on exchange interaction between the ferromagnetic and electrosensitive layers, the minimum bit size is 7 nm, which indicates prospects for this type of MERAM.

Received: 30.10.2014

 English version: Physics of the Solid State, 2015, 57:5, 924–928

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