Abstract:
It is shown that increasing the degree of chromium doping of thin VO$_2$ films leads to a decrease in the frequencies of their dielectric spectra features and to an increase in the temperature of the semiconductor-metal phase transition. Based on the Debye formula, the parameters of the dielectric spectra are calculated using the Gavrilyak-Negami function. Macroscopic and microscopic analysis of the formation mechanism of experimental dielectric spectra features was carried out. The role of Cr–Cr-dimers of increased strength in the formation of spectra of heavily doped VO$_2$:Cr film was revealed.