Surface physics, thin films

Magnetic and magnetoresistive properties of multilayer nanostructures (Со/СоО)$_{60}$

Yu. E. Kalinin^a, K. S. Gabriel’s^a, V. A. Makagonov^a, V. A. Foshin^a, R. B. Morgunov^b, M. V. Bahmetev^b, E. V. Dvoretskaya^b, I. I. Khodos<sup>b

a</sup> Voronezh State Technical University
^b Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: The structure and electrical, magnetic, and magnetoresistive properties of thin films (Со/СоО)$_{60}$ were studied. Using X-ray diffraction and transmission electron microscopy methods, it was shown that the obtained films are multilayered, and an increase in the thickness of the Co interlayer to 0.8 nm leads to a transition from island layers of Co in a continuous CoO matrix to a multilayer structure. The study of electrical properties showed that there is a consistent change of the dominant transfer mechanism in the studied system from the hopping mechanism of conductivity along localized states near the Fermi level with a variable hop length to hops along the nearest neighbors. The study of magnetic and magneto-optical properties showed the presence of magnetic anisotropy in the samples near the percolation threshold and beyond it. The magnetoresistance is determined by the mechanism of spin-dependent tunneling between granules and clusters of metallic Co for samples up to the percolation threshold, and beyond the threshold it is determined by the anisotropic magnetoresistance of percolation networks of ferromagnetic Co and the Lorentz magnetoresistance.

Keywords: multilayer nanostructures, specific electrical resistance, percolation threshold, magnetic properties, anisotropic magnetoresistance.

Received: 11.01.2025
Revised: 18.04.2025
Accepted: 24.04.2025

DOI: 10.61011/FTT.2025.04.60555.9-25

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