This article is cited in 14 papers

Magnetism

Ferromagnetism and microwave magnetoresistance of GaMnSb films

A. D. Talantsev^a, O. V. Koplak^a, R. B. Morgunov<sup>ab

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^b Moscow State Humanitarian University named after M. A. Sholokhov

Abstract: The influence of the concentration of holes on the ferromagnetism of MnSb clusters in GaMnSb films has been revealed. It has been found that the high concentration of holes leads to their tunneling through the Schottky barrier at the cluster-crystal lattice interface and to a change in the magnetization of clusters. The microwave resistance of the films depends on the spin polarization of holes, which is controlled by the magnetization of clusters and the external magnetic field. The parameters of the crystalline anisotropy of ferromagnetic clusters and the dipole-dipole interaction between them have been determined.

Received: 25.08.2014

 English version: Physics of the Solid State, 2015, 57:2, 322–330

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