This article is cited in 2 papers

Semiconductors

Elastic scattering of exciton polaritons

N. S. Averkiev^a, G. M. Savchenko^b, R. P. Seisyan<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The probability of elastic scattering by impurities of exciton polaritons in thin GaAs samples has been calculated theoretically. It has been shown that thin samples of commercially pure GaAs satisfy the conditions for the existence of exciton polaritons. It has also been demonstrated that, in the case of GaAs, the inclusion of the polariton effect in the analysis leads only to a slight decrease in the scattering probability calculated for a “bare” exciton. The role of elastic scattering of exciton polaritons in the absorption of light by a semiconductor has been discussed.

Received: 01.09.2014

 English version: Physics of the Solid State, 2015, 57:2, 290–295

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