This article is cited in 4 papers

Semiconductors

Manifestation of spin-dependent recombination in afterglow of zinc oxide crystals

A. S. Gurin, N. G. Romanov, D. O. Tolmachev, P. G. Baranov

Ioffe Institute, St. Petersburg

Abstract: Long-lasting afterglow of ZnO single crystals grown by hydrothermal method has been studied using high-frequency (94 GHz) optically detected magnetic resonance (ODMR) at helium temperatures. Giant (up to 30%) afterglow intensity-detected electron paramagnetic resonance signals of shallow donors and deep acceptors, which are lithium atoms substituting for zinc in the ZnO lattice, unambiguously indicate a spin-dependent character of the donor-acceptor recombination. The observed variations in the shape of the afterglow-detected ODMR spectra of lithium acceptors with time passed after irradiation are associated with the difference in the recombination rates of shallow donors with axial and non-axial LiZn centers and with a change in the recombination character with time.

Received: 22.07.2014

 English version: Physics of the Solid State, 2015, 57:2, 280–284

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