This article is cited in 3 papers

Impurity centers

Isotope-induced generation of paramagnetic defects under plastic deformation of $^{29}$Si crystals

O. V. Koplak^ab, A. I. Dmitriev^ac, R. B. Morgunov<sup>ac

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^b National Taras Shevchenko University of Kyiv
^c Moscow State Humanitarian University named after M. A. Sholokhov

Abstract: It has been found that the number of paramagnetic clusters formed during plastic deformation of silicon crystals increases in crystals enriched with the $^{29}$Si isotope. It has been shown that there are antiferromagnetic spin-spin couplings with energies of $\sim$30–50 K in deformation-induced clusters of paramagnetic defects. The effect of the hyperfine interaction on spin-dependent reactions of silicon with oxygen or changes in elastic constants and lattice dilatation can cause the formation of deformation-induced defects in crystals enriched with $^{29}$Si.

Received: 22.04.2014
Accepted: 25.06.2014

 English version: Physics of the Solid State, 2015, 57:1, 100–105

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