I. S. Kotousova, S. P. Lebedev, V. V. Antipov, A. A. Lebedev, “Electron Diffraction Study of transformation the reconstruction 6<nobr>$\sqrt{3}$</nobr> on 4H-SiC(0001) in quasi-free-standing epitaxial graphene”, Fizika Tverdogo Tela, 2022, Volume 64, Issue 12,Pages <nobr>2055

Surface physics, thin films

Electron Diffraction Study of transformation the reconstruction 6$\sqrt{3}$ on 4H-SiC(0001) in quasi-free-standing epitaxial graphene

I. S. Kotousova^a, S. P. Lebedev^a, V. V. Antipov^b, A. A. Lebedev^a

^a Ioffe Institute, St. Petersburg
^b State Technological Institute of St. Petersburg (Technical University), St. Petersburg, Russia

Abstract: Through the agency of reflection high-energy electron diffraction (RHEED) we have studied the transformation of the reconstruction 6$\sqrt{3}$ grown on substrate 4H-SiC in an Ar medium with a short sublimation annealing time in quasi-free-standing epitaxial graphene due to the use of hydrogen intercalation. It was found that grown reconstruction layer was not uniform. The comparison of the results of the structural study of quasi-free-standing graphene and single-layer graphene on buffer layer has been made.

Keywords: SiC, reconstruction, intercalation, graphene, RHEED.

Received: 11.08.2022
Revised: 11.08.2022
Accepted: 19.08.2022

DOI: 10.21883/FTT.2022.12.53662.458