Impurity centers

Raman and photoluminescence spectra for Ho, Er, Tm, Yb, Lu, and Y doped hafnia

S. N. Shkerin^a, A. N. Meshcherskikh^a, T. V. Yaroslavtseva^b, R. K. Abdurakhimova<sup>a

a</sup> Institute of High-Temperature Electrochemistry, RAS, Yekaterinburg, Russia
^b Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Yekaterinburg, Russia

Abstract: Previously obtained and certified HfO$_2$ based samples were investigated by two Raman spectrometers with different wave source. Stokes reflexes have to be independent of the laser frequency so they were distinguished by comparison of different laser results. For the first time the dependence of Stokes lines frequencies on the cation radii of dopants was observed. Frequencies monotonically varied with the ratio of cation-dopant to hafnium radii changes. All non-Stokes reflexes are considered as photoluminescence. They were compared with both the literature data on luminescence of REM cations and the experimental results on zirconia-based materials intrinsic photoluminescence, which was a property of its point defects. Intrinsic photoluminescence is observed for the first time on hafnia-based materials.

Keywords: Raman spectroscopy, luminescence, hafnia with cubic structure, REE.

Received: 12.07.2022
Revised: 12.07.2022
Accepted: 12.08.2022

DOI: 10.21883/FTT.2022.12.53653.435

Bibliographic databases:

•