Semiconductors

Interface doping of zinc oxide nanorods

A. A. Ryabko^a, D. S. Mazing^b, A. A. Bobkov^b, A. I. Maximov^b, V. S. Levitskii^a, E. F. Lazneva^c, A. S. Komolov^c, V. A. Moshnikov^b, E. I. Terukov<sup>a

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
^c Saint Petersburg State University, St. Petersburg, Russia

Abstract: The effect of an increase in the electrical conductivity of a system of zinc oxide nanorods by a factor of 10$^5$ during atomic layer deposition of a thin dielectric layer of aluminum oxide was found. It is shown that a change in the electrical conductivity of zinc oxide during atomic layer deposition of aluminum oxide on the surface is also observed for thin polycrystalline layers of zinc oxide. A study of polycrystalline layers of zinc oxide coated with aluminum oxide using ultraviolet and X-ray photoelectron spectroscopy is presented. Based on the results of photoelectron spectroscopy, two main factors for changing the electrical conductivity are proposed, which consist in the formation of a two-dimensional electron gas at the ZnO|Al$_2$O$_3$ interface and doping of the near-surface region of zinc oxide with aluminum atoms.

Keywords: nanorods, zinc oxide, aluminum oxide, atomic layer deposition, transparent electrodes, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy.

Received: 16.06.2022
Revised: 16.06.2022
Accepted: 18.06.2022

DOI: 10.21883/FTT.2022.11.53320.408

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