Semiconductors

Energy of electron-hole relative motion in exciton in external electric field in thick GaAs plate

D. K. Loginov^a, A. V. Donets<sup>b

a</sup> Spin optics laboratory, Saint-Petersburg State University, St. Petersburg, Peterhof, Russia
^b Saint Petersburg State University, St. Petersburg, Peterhof, Russia

Abstract: The dependence of the energy of the relative electron-hole motion in an exciton on the magnitude of applied electric field for various thicknesses of an ideal flat semiconductor plate is theoretically calculated. It is shown that the variation of the plate thickness significantly affects the dependence of the energy on the electric field. The effect should be observed in plates whose thickness exceeds the Bohr exciton radius by two orders of magnitude.

Keywords: exciton, electrick field, thick plate.

Received: 02.05.2022
Revised: 24.06.2022
Accepted: 02.07.2022

DOI: 10.21883/FTT.2022.11.53317.303

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