Semiconductors

Diffusion of phosphorus and gallium from a deposited layer of gallium phosphide into silicon

N. F. Zikrillaev^a, S. V. Koveshnikov^a, Kh. S. Turekeev^a, N. Norkulov^b, S. A. Tachilin<sup>a

a</sup> Tashkent State Technical University, Tashkent, Uzbekistan
^b Mirzo Ulug’bek National University of Uzbekistan, Tashkent, Uzbekistan

Abstract: Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface was studied. After diffusion, the silicon samples were examined by the Van der Pauw method, and a scanning electron microscope was used to determine the concentration distribution of phosphorus and gallium atoms impurity.

Keywords: diffusion, gallium phosphide, silicon, solubility, concentration, binary complexes.

Received: 27.04.2022
Revised: 04.07.2022
Accepted: 04.07.2022

DOI: 10.21883/FTT.2022.11.53316.367

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