XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022
Magnetism

Spin magnetoresistance of a strontium iridate/manganite heterostructure

K. I. Constantinian^a, G. A. Ovsyannikov^a, A. V. Shadrin^ab, V. A. Shmakov^a, A. M. Petrzhik^a, Yu. V. Kislinskii^a, A. A. Klimov<sup>ac

a</sup> Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia
^b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
^c MIREA — Russian Technological University, Moscow, Russia

Abstract: The results of the angular dependences of the magnetoresistance of the SrIrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructure made of oxide thin films epitaxially grown on a NdGaO$_3$ substrate are presented and discussed. The resistance of the heterostructure was measured in configuration of planar Hall effect with magnetic field applied in parallel making possible to estimate the spin-Hall angle. The contribution of the anisotropic magnetoresistance and the spin-Hall magnetoresistance occurred due to strong spin-orbit interaction in the SrIrO$_3$ film were evaluated.

Keywords: strontium iridate, spin-orbit interaction, spin magnetoresistance, spin-Hall angle.

Received: 29.04.2022
Revised: 29.04.2022
Accepted: 12.05.2022

DOI: 10.21883/FTT.2022.10.53085.46HH

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