XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022
Superconductivity

Fabrication of high-quality Josephson junctions based on Nb|Al-AlN|NbN

A. M. Chekushkin, L. V. Filippenko, M. Yu. Fominskii, V. P. Koshelets

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia

Abstract: A description of the fabrication technology of high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors $V_g$ = 3.2–3.4 mV, tunnel current density up to $J$ 35 kA/cm$^2$, quality factor $R_j/R_n$ (ratio of subgap resistance to normal-state resistance) up to 30, junction area up to 1 $\mu$m$^2$. The SIS junctions are integrated into the NbTiN|SiO$_2$|Al microstrip line.

Keywords: superconducting devices, superconductor-insulator-superconductor tunnel junction, plasma etching.

Received: 29.04.2022
Revised: 29.04.2022
Accepted: 12.05.2022

DOI: 10.21883/FTT.2022.10.53080.49HH

Bibliographic databases:

•