Graphenes

Features of the low-temperature conductivity of organometallic perovskite films with the introduction of graphene oxide particles into them

M. K. Ovezov, P. A. Aleshin, A. N. Aleshin

Ioffe Institute, St. Petersburg, Russia

Abstract: The influence of the introduction of graphene oxide (GO) particles on the low-temperature conductivity of composite films based on organometallic perovskites CH$_3$NH$_3$PbBr$_3$ with GO particles with a concentration of 0–5 wt.% has been studied. It has been established that the introduction of GO particles into ITO/CH$_3$NH$_3$PbBr$_3$ : GO/ITO/glass films manifests itself in a decrease in the activation energy of the temperature dependence of the conductance. A sharp increase by 5–6 orders of magnitude of the resistance of the films at temperatures below 150 K was found. It is assumed that in the studied CH$_3$NH$_3$PbBr$_3$ : GO systems at $T>$ 150 K, the hopping mechanism of transport predominates, associated with the capture and accumulation of charge carriers in GO particles, and the increase in resistance at $T<$ 150 K may be due to the structural phase transition characteristic of organometallic perovskites in this temperature range.

Keywords: organometallic perovskites, graphene oxide, electrical conductivity, low-temperature transport.

Received: 28.03.2022
Revised: 28.03.2022
Accepted: 29.03.2022

DOI: 10.21883/FTT.2022.07.52577.323

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