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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2022 Volume 64, Issue 6, Pages 619–627 (Mi ftt11021)

Semiconductors

Elasticity of 3D and 2D XC (X = Si, Ge, Sn) compounds: Keating and Harrison models

S. Yu. Davydov

Ioffe Institute, St. Petersburg, Russia

Abstract: For the bulk and monolayer IV group carbides in the scope of Keating and/or Harrison models analytical expressions are obtained for second order elastic constants $c_{ij}$, sound velocities $v$, third order elastic constants $c_{ijk}$, pressure dependencies of $c_{ij}$ and $v$, Grneisen constant, thermal expansion coefficient and temperature dependence of bulk moduli. It is shown that in the row of SiC–GeC–SnC values of all considered characteristics decrease while thermal expansion coefficient increases. All the model estimations are compared with experimental data and calculating results of other authors.

Keywords: force constants, elastic constants, sound velocities, anharmonic characteristics.

Received: 28.02.2022
Revised: 28.02.2022
Accepted: 01.03.2022

DOI: 10.21883/FTT.2022.06.52387.300



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© Steklov Math. Inst. of RAS, 2026