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Semiconductors

Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide

Sh. Sh. Sharofidinov^ab, S. A. Kukushkin^b, M. V. Staritsyn^c, A. V. Solnyshkin^d, O. N. Sergeeva^d, E. Yu. Kaptelov^a, I. P. Pronin<sup>a

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia
^c Prometei Central Research Institute of Structural Materials, St. Petersburg, Russia
^d Tver State University, Tver, Russia

Abstract: The microstructure and pyroelectric properties of Al$_x$Ga$_{1-x}$N composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic Al$_x$Ga$_{1-x}$N layers of different composition located perpendicular to the direction of growth, was discovered during the growth of layers. Measurements of the pyroelectric coefficients of these heterostructures have shown that regardless of the orientation of the initial Si substrate and their pyroelectric coefficients have close values of the order of $\gamma\sim$ (0.7–1) $\cdot$ 10$^{-10}$ C/cm$^2$K. It is shown that to increase the magnitude of the pyroresponse it is necessary to deposit an AlN layer with a thickness exceeding 1 $\mu$m on the Al$_x$Ga$_{1-x}$N/SiC/Si surface. This leads to record values of the pyroelectric coefficient $\gamma\sim$ 18 $\cdot$ 10$^{-10}$ C/cm$^2$K for AlN crystals and films.

Keywords: silicon carbide-on-silicon substrates, chloride-hydride epitaxy, AlGaN epitaxial layers, aluminum nitride, gallium nitride, pyroelectric properties.

Received: 30.12.2021
Revised: 30.12.2021
Accepted: 03.01.2021

DOI: 10.21883/FTT.2022.05.52331.250

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