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Semiconductors

Pyroelectric coefficient estimations for aluminum and gallium compounds

S. Yu. Davydov

Ioffe Institute, St. Petersburg, Russia

Abstract: Analytical expression for pyroelectric coefficient $p$ for the compounds with wurtzit structure is given. Obtained values of $p$ for AlN and GaN are in satisfactory agreement with the first-principles calculations. Pyroelectric effect in the uniform epitaxial films and heterostructures is discussed.

Keywords: pyroelectric coefficient, wurtzite structure, monocrystal, thin film, heterostructure.

Received: 01.12.2021
Revised: 16.01.2021
Accepted: 22.01.2021

DOI: 10.21883/FTT.2022.05.52329.248

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