Abstract:
The results of study of bias voltage $U_b$ and substrate temperature $T_s$ influence on the texture of FeCo films with the thickness of 180 nm deposited on Si/SiO$_2$ substrates by DC magnetron sputtering are presented. It is shown that the change of $U_b$ from -250 V to 80 V leads to the growth of films with (110) texture. Further change of $U_b$ from 80 V to 250 V causes the growth of films having (200) texture. Films deposited at $U_b$ = 0 and $T_s$ = 60–300$^\circ$C have (200) texture. Further increase of $T_s$ results in the change of film texture to (110).