Phase transitions

Growth regimes of aluminium nitride films on hybrid SiC/Si(111) substrates

A. A. Koryakin^a, S. A. Kukushkin^b, A. V. Osipov^b, Sh. Sh. Sharofidinov<sup>b

a</sup> Saint Petersburg State University, St. Petersburg, Russia
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

Keywords: aluminium nitride, gallium nitride, silicon carbide on silicon, method HVPE, nucleation, wide-bandgap semiconductors, heterostructures.

Received: 22.09.2021
Revised: 22.09.2021
Accepted: 26.09.2021

DOI: 10.21883/FTT.2022.01.51840.209

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