Semiconductors

Dielectric and optical properties of the cubic SiC, GeC and SnC monocrystals: Model estimations

S. Yu. Davydov, A. A. Lebedev

Ioffe Institute, St. Petersburg, Russia

Abstract: Within the scope of the Harrison's bond orbital model analytical expressions of the high- and low-frequency dielectric susceptibilities and dielectric constants, linear electrooptical coefficient, photoelastic constants and pressure dependences of the dielectric constants are obtained for the cubic carbides of the group IV elements.

Keywords: dielectric susceptibility, dielectric constants, electrooptical coefficient, photoelastic constant.

Received: 25.08.2021
Revised: 25.08.2021
Accepted: 26.09.2021

DOI: 10.21883/FTT.2022.01.51833.193

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