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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2022 Volume 64, Issue 1, Pages 60–63 (Mi ftt10941)

This article is cited in 1 paper

Semiconductors

Spontaneous spin magnetism of donor conduction electrons of hybridized states of a crystal formed by a system of 3$d$-elements impurity atoms of low concentration ($<$1 at.%)

T. E. Govorkova, V. I. Okulov

Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Yekaterinburg, Russia

Abstract: The given work is devoted to the experimental proof of existing the spontaneous spin polarization of the donor electron system of 3$d$-transition element impurity atoms of low concentration ($<$ 1 at.%) in a mercury selenide crystal. For this purpose there have been measured the dependences of the magnetization on the magnetic field strength at low temperatures ($T$ = 5 K). As a result of the analysis of the obtained dependences, there were extracted the impurity contributions, which are described by the magnetization curves typical of the ferromagnets, and by the magnetic parameters conforming to the spontaneous magnetism of the systems under study, which are unambiguously related to the donor conduction electrons of the outer $d$-shells of impurity atoms. By its nature, according to the developed theoretical concepts, the spontaneous spin polarization manifests itself in exchange interaction, taking place in hybridizing the electronic states of the impurity atom and the conduction band ones of the crystal.

Keywords: 3$d$-impurities of the low concentration, gapless semiconductors, hybridized electronic states, spontaneous spin polarization, low-temperature ferromagnetism.

Received: 02.09.2021
Revised: 02.09.2021
Accepted: 04.09.2021

DOI: 10.21883/FTT.2022.01.51831.198



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