Low dimensional systems

Microstructure features of nanosized AsSb precipitates in LT-GaAsSb

L. A. Snigirev^a, A. V. Myasoedov^a, N. A. Bert^a, V. V. Preobrazhenskii^b, M. A. Putyato^b, B. R. Semyagin^b, V. V. Chaldyshev<sup>a

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The structural state of AsSb precipitates formed upon annealing of non-stoichometric GaAs$_{0.97}$Sb$_{0.03}$, epitaxial layer grown by molecular beam epitaxy on a GaAs (001) substrate at a temperature of 150$^\circ$C, was investigated using transmission electron microscopy. New orientation relationships between AsSb precipitates with a rhombohedral lattice and the zincblende LT-GaAsSb matrix subjected to isothermal annealing at temperatures below 800$^\circ$C for 15 minutes, were discovered: $\{\bar{1}012\}_p\parallel\{111\}_m$ and $\langle\bar{2}20\bar{1}\rangle\parallel\langle1\bar{1}0\rangle_m$. These orientation relationships differ from those known for As precipitates (0003)$_p$ $\parallel\{111\}_m$; $\langle\bar{1}2\bar{1}0\rangle_p\parallel\langle1\bar{1}0\rangle_m$ and take place for particles with size less than $\sim$ 10 nm. For particles smaller than $\sim$ 7 nm, electron microscopy results allow to hypothesize a transition to the cubic phase $Pm\bar{3}m$.

Keywords: non-stoichiometric GaAsSb, precipitation, transmission electron microscopy, orientation relationships.

Received: 24.11.2023
Revised: 24.11.2023
Accepted: 24.11.2023

DOI: 10.61011/FTT.2023.12.56859.263

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