International Conference PhysicA.SPb/2023

Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures

A. A. Maksimova^ab, A. V. Uvarov^a, E. A. Vyacheslavova^a, A. I. Baranov^a, A. S. Gudovskikh<sup>ab

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia

Abstract: In this work, boron phosphide was deposited on silicon substrates using plasma-chemical deposition at a low temperature (350$^\circ$C) for the first time. The following precursors were used: a gas mixture of diborane (B$_2$H$_6$/H$_2$) and pure phosphine (PH$_3$). The Raman spectra of the original samples showed broadened peaks at 450 cm$^{-1}$ and $\approx$700 cm$^{-1}$ corresponding to amorphous boron phosphide. Annealing of the samples affected the structure of the layers and led to partial crystallization; a peak of crystalline boron phosphide was detected at 823 cm$^{-1}$.

Keywords: boron phosphide, PECVD, scanning electron microscopy, Raman spectroscopy.

Received: 19.05.2023
Revised: 17.07.2023
Accepted: 30.10.2023

DOI: 10.61011/FTT.2023.12.56759.5207k

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