Abstract:
Polycrystalline silicon/silicon oxide on silicon substrate structures are obtained by plasma chemical vapor deposition. The effect of rf power, gas mixture pressure, and vacuum annealing temperature on the roughness, mechanical stresses, and refractive index of layers has been studied. It is shown that vacuum annealing makes it possible to substantially correct the values of material parameters. The conditions for formation of structures suitable for further fabrication of metasurfaces and optical elements and systems based on them are established.
Keywords:metasurface, silicon on insulator, silicon oxide, plasma-enhanced chemical vapor deposition.