International Conference PhysicA.SPb/2023

Comparative studies of the properties of thick GaN layers with different types of crystal structure grown on a ceramic substrate

M. G. Mynbaeva, A. N. Smirnov, V. Yu. Davydov, A. A. Lavrent'ev

Ioffe Institute, St. Petersburg, Russia

Abstract: The results of a comparative study of the properties of quasi-bulk GaN with different types of structure are presented. An orientation dependence of the introduction of an unintentionally introduced donor impurity of oxygen which determines the value of the concentration of free electrons in the grown material is discussed.

Keywords: Gallium nitride, ceramic substrate, texture, polycrystal, Raman spectroscopy.

Received: 12.05.2023
Revised: 18.07.2023
Accepted: 30.10.2023

DOI: 10.61011/FTT.2023.12.56739.5098k

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