Semiconductors

Unusual defects in CVD diamond

S. Yu. Martyushov^a, I. L. Shul'pina^b, A. A. Lomov^c, S. N. Polyakov<sup>a

a</sup> Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow
^b Ioffe Institute, St. Petersburg, Russia
^c Valiev Institute of Physics and Technology of Russian Academy of Sciences, Moscow, Russia

Abstract: Structural defects of a diamond grown homoepitaxially by chemical vapor deposition (CVD) on a single-crystal substrate of a Ib diamond obtained by the high-pressure high-temperature method (HPHT) were studied using the methods of X-ray diffraction imaging (projection and section X-ray topography) and high-resolution (double-crystal) X-ray diffractometry. It is shown that there are no HPHT substrate defects in CVD diamond, but new ones are present – stacking faults of an unusual type and structure, which coexist with highly perfect crystal regions suitable for manufacturing elements of X-ray optics. For the first time, macrodefects were discovered, which were previously observed only in dislocation-free silicon single crystals.

Keywords: HPHT diamond, synthetic diamond, structural defects, dislocations, stacking faults, X-ray diffraction imaging, section and projection topography, high-resolution X-ray diffractometry.

Received: 17.07.2023
Revised: 04.08.2023
Accepted: 05.08.2023

DOI: 10.61011/FTT.2023.11.56540.154

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