Abstract:
Single crystals of two intercalated compounds, Cu$_x$TiSe$_2$ ($x$ = 0.025, 0.58), were studied using the method of thermoelectric measurements under pressure. Experimental data for the pressure dependencies of thermoelectric power (Seebeck coefficient) and electrical resistance were obtained in the range of quasi-hydrostatic pressure up to 10 GPa. It is found that Cu$_{0.025}$TiSe$_2$ crystals are characterized by semiconductor conductivity, which conserve with pressure rising up to 1–3 GPa. The bandgap value and pressure dependency of relative change of thermoelectric power factor were estimated in the semiconductor phase. For Cu$_{0.58}$TiSe$_2$ crystals, which displayed metallic conductivity, the bulk modulus of the high-pressure phase was determined. Furthermore, the impact of multiple cyclic compression on the electrophysical properties of Cu$_x$TiSe$_2$ crystals was thoroughly investigated.
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