Ferroelectricity

Crystal structure, nanostructure, and dielectric characteristics of 91NaNbO$_3$–0.09SrZrO$_3$ films grown on a (001)SrTiO$_3$(0.5% Nb) substrate

Ya. Yu. Matyash^a, D. V. Stryukov^a, A. V. Pavlenko^ab, N. V. Ter-Oganessian<sup>b

a</sup> Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
^b Research Institute of Physics, Southern Federal University, Rostov-on-Don, Russia

Abstract: The structure, nanostructure, and properties of a 0.91NaNbO$_3$–0.09SrZrO$_3$ thin film with a thickness of $\sim$ 30 nm, grown by RF cathode sputtering in an oxygen atmosphere on a (001)SrTiO$_3$(0.5%Nb) substrate, have been studied. According to X-ray diffraction data, a significant tensile strain of the unit cell, which reaches 4.8%, occurs in the film in the direction perpendicular to the substrate. It is shown, that the likely film growth mechanism is the Frank-van der Merwe mechanism. The results of studying the dielectric hysteresis loops of the film in fields up to 833 kV/cm and its piezoactivity using atomic force microscopy indicated the presence of a ferroelectric response in it. Possible reasons for the identified features are discussed.

Keywords: antiferroelectric, NaNbO$_3$, SrZrO$_3$, atomic force microscopy, X-ray diffraction, dielectric spectroscopy.

Received: 14.06.2023
Revised: 23.08.2023
Accepted: 25.08.2023

DOI: 10.61011/FTT.2023.10.56326.111

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