Semiconductors

Interface anisotropy manifestation in CdTe/CdZnTe quantum wells

L. V. Kotova^a, R. Andre^b, H. Mariette^cb, V. P. Kochereshko<sup>a

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Institut Neel CNRS, Grenoble, France
^c University of Tsukuba, Japan

Abstract: The spectra of polarized reflection from a structure with a single quantum well and asymmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.4}$Mg$_{0.6}$Te barriers are studied in this work. The Stokes parameters of reflected light were measured. In the structure with asymmetric barriers under study in the region of exciton resonances, the phenomenon of light birefringence caused by a reduced symmetry of the interfaces compared to the bulk was found.

Keywords: quantum well, excitons, anisotropy, interface.

Received: 11.05.2023
Revised: 11.05.2023
Accepted: 12.05.2023

DOI: 10.21883/FTT.2023.07.55851.80

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