This article is cited in 1 paper

Semiconductors

Optical and spin properties of silicon vacancy centers created by proton irradiation in a $6H/15R$ silicon carbide heterostructure

I. A. Eliseyev, E. V. Edinach, O. P. Kazarova, A. N. Smirnov

Ioffe Institute, St. Petersburg, Russia

Abstract: Optically active silicon vacancy defects $(V_{\mathrm{Si}})$ with an electron spin $S=3/2$ in a $6H-\mathrm{SiC}/15R-\mathrm{SiC}$ silicon carbide heterostructure grown by high-temperature sublimation technique have been studied. By means of low-temperature micro-photoluminescence ($\mu$-PL) and electron paramagnetic resonance (EPR) techniques, we demonstrate the potential to generate five disparate types of $(V_{\mathrm{Si}})$ centers with distinct spectral properties in the aforementioned heterostructure using proton irradiation with $E=15$ MeV. Wherein each type of $(V_{\mathrm{Si}})$ center is defined by its zero-phonon line (ZPL) and a distinct value of spin sublevel splitting in a zero magnetic field. As a result, we have demonstrated the scalability of the number of optically active spin centers that can be enclosed within a single crystalline matrix.

Keywords: silicon carbide, heterostructures, photoluminescence, electron paramagnetic resonance, proton irradiation, spin centers.

DOI: 10.21883/FTT.2023.06.55661.74

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