XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 13-16, 2023
Magnetism

Magnetic tunnel junction model in Verilog-A for use in CAD environments for integrated circuits

M. D. Lobkova^a, P. N. Skirdkov^ab, K. A. Zvezdin<sup>ab

a</sup> New Spintronic Technologies, Russian Quantum Center, Skolkovo Innovation Center, Moscow Region, Moscow, Russia
^b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: Electrical model of a magnetic tunnel junction is developed in Verilog-A language, which can use in CAD systems to design an integrated circuit of spintronics devices. In order to check the correct operation of the model verification tests were created and carried out in Cadence ADE. Each test corresponds to the operating mode of the magnetic tunnel junction: switching, generation, rectification. Thus, the developed model can be used to simulate hybrid circuits comprising CMOS elements and magnetic tunnel junctions.

Keywords: magnetic tunnel junction, MTJ, spintronics, spintronics devices, magnetic tunnel junction model in Verilog-A, MTJ model development, MTJ operating modes.

Received: 17.04.2023
Revised: 17.04.2023
Accepted: 11.05.2023

DOI: 10.21883/FTT.2023.06.55649.06H

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