RUS  ENG
Full version
JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2025 Volume 67, Issue 1, Pages 132–137 (Mi ftt10698)

XVI Russian Conference on Semiconductor Physics, October 7-11, 2024, St. Petersburg
Dielectrics

Resistive and dielectric response in hafnium diselenide intercalated with copper atoms, under excitation by an alternating electric field

V. G. Pleshchev

Institute of Natural Sciences and Mathematics, Ural Federal University

Abstract: A joint study of relaxation processes during charge transfer and polarisation change under dynamic excitation has been carried out by impedance spectroscopy in intercalated Cu$_x$HfSe$_2$ samples. The maximum values of the imaginary component of the impedance allowed us to determine the relaxation times in the system of mobile charge carriers. A significant frequency dispersion of the real and imaginary components of the dielectric permittivity was found in the used samples. Using the dielectric modulus formalism, dielectric relaxation times decreasing in magnitude with increasing copper content in the samples and with increasing temperature have been determined. It is shown that the dielectric relaxation times appear to be smaller than the relaxation times for charge transfer determined from the frequency dependences of the imaginary part of the complex impedance.

Keywords: resistive and dielectric response in hafnium diselenide intercalated with copper atoms, under excitation by an alternating electric field.

Received: 24.10.2024
Revised: 22.12.2024
Accepted: 23.12.2024

DOI: 10.61011/FTT.2025.01.59779.278



Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026