XVI Russian Conference on Semiconductor Physics, October 7-11, 2024, St. Petersburg
Semiconductors

Energy transfer in system of GaAs/AlGaAs quantum wells with different thickness and thick barriers

N. G. Filosofov^a, V. F. Agekyan^a, S. Yu. Verbin^a, A. N. Reznitskii^b, A. Yu. Serov^a, I. V. Shtrom^acd, I. V. Ilkiv^cd, R. R. Reznik^a, G. È. Cirlin<sup>acd

a</sup> Saint Petersburg State University
^b Ioffe Institute, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: Temperature dependence of luminescence of heterostructure GaAs/Ga$_{0.6}$Al$_{0.4}$As was investigated to study energy transfer between the quantum wells (QWs). The sample contains three 9.6, 4.8 and 2.4 nm thick QWs separated by 14 nm thick barriers. The experimental data was analyzed based on the model that has been previously used to study energy transfer in II–VI heterostructures.

Keywords: III-V quantum wells, luminescence, energy transfer.

Received: 11.10.2024
Revised: 28.11.2024
Accepted: 03.12.2024

DOI: 10.61011/FTT.2025.01.59764.5-25

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