Low dimensional systems

Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface

Ya. A. Parkhomenko, È. V. Ivanov, K. D. Moiseev

Ioffe Institute, St. Petersburg, Russia

Abstract: The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature.

Keywords: quantum dots, electroluminescence, InAs, InSb, type II heterojunction.

Received: 25.01.2023
Revised: 25.01.2023
Accepted: 01.02.2023

DOI: 10.21883/FTT.2023.04.55304.11

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