Ferroelectricity

Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films

M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva

Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia

Abstract: Films of hafnium oxide (HfO$_2$) were synthesized on a silicon substrate by magnetron sputtering of a target with a similar composition. The results of studies of the structural composition of HfO$_2$ films and the electrical properties of metal-insulator-semiconductor (Ni-HfO$_2$-$n$-Si) structures are presented.

Keywords: Metal-dielectric-semiconductor (MDS) structures, hafnium oxide (HfO$_2$) ferroelectric films, piezoelectric response, microstructure, electrical properties.

Received: 18.12.2022
Revised: 18.12.2022
Accepted: 24.01.2023

DOI: 10.21883/FTT.2023.04.55293.8

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