Semiconductors

Determination of solubility of cobalt in singlecrystal silicon method neutron activation

M. Yu. Tashmetov^a, Sh. Makhkamov^a, T. S. Tillaev^a, M. N. Erdonov^a, Kh. M. Kholmedov<sup>b

a</sup> Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Tashkent
^b Tashkent Al-Khwarizmi University of Information Technologies, 10 Amir Timur str., 100084, Tashkent, Uzbekistan

Abstract: The possibility of instrumental neutron activation analysis is revealed for determining the solubility of cobalt in single-crystal silicon. It was shown that in $n$-Si in the diffusion temperature range of 1000–1250$^\circ$C the total solubility of the $^{60}$Со impurity varies within the concentration range of 2.8 $\cdot$ 10$^{14}$–9 $\cdot$ 10$^{15}$ cm$^{-3}$, and the electrically active concentration grows from 10$^{13}$ to 3 $\cdot$ 10$^{14}$ cm$^{-3}$. In order to reduce the error in determining the concentration of 10$^{13}$ in doped Si samples, it is suggested to use the parent stable isotope rather than the daughter cobalt radionuclide.

Keywords: monocrystalline silicon, cobalt impurity, diffusion, neutron activation analysis, solubility, irradiation, radionuclide, concentration.

Received: 23.02.2022
Revised: 23.02.2022
Accepted: 24.02.2022

DOI: 10.21883/FTT.2023.04.55288.557

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