This article is cited in 1 paper

Semiconductors

Characterization of wide-bandgap layers in laser structures based on CdHgTe

M. S. Ruzhevich^a, K. J. Mynbaev^b, N. L. Bazhenov^b, M. V. Dorogov^a, S. A. Dvoretskii^c, N. N. Mikhailov^c, V. G. Remesnik^c, I. N. Uzhakov<sup>c

a</sup> St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Ioffe Institute, St. Petersburg
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The results of a study of the optical and structural properties of wide-bandgap ($x\sim$ 0.7) layers in laser heterostructures based on Cd$_x$Hg$_{1-x}$Te solid solutions grown by molecular beam epitaxy on (013)GaAs substrates, as well as epitaxial films similar to these layers in chemical composition, are presented. It is shown that the position of the maximum of the photoluminescence spectrum and the nature of its temperature shift are related to the disordering of the composition of the solid solution. Shallow and deep acceptor levels were found in the bandgap. The possible influence of disordering and acceptor levels in laser structures on the energy spectrum of carriers is discussed.

Keywords: CdHgTe, laser structures, photoluminescence, defects, structural properties.

Received: 12.12.2022
Revised: 12.12.2022
Accepted: 22.12.2022

DOI: 10.21883/FTT.2023.03.54738.552

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