Semiconductors

Estimates of the dielectric and optical characteristics for the IV group 3D- and 2D-binary compounds

S. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: Using the Harrison's bond orbital model for the IV group 3D- and 2D-compounds analytical expressions of the high- and low-frequency dielectric suscepti-bilities and dielectric constants, linear electrooptical coefficient, photoelastic con-stants and pressure dependences of the dielectric constants are obtained.

Keywords: dielectric susceptibility and permittivitiy, photoelectric coefficient.

Received: 30.09.2022
Revised: 15.10.2022
Accepted: 20.10.2022

DOI: 10.21883/FTT.2023.02.54288.491

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