V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, A. A. Lebedev, M. E. Levinshteĭn, V. V. Kozlovsky, “Low-temperature luminescence study of the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes”, Fizika Tverdogo Tela, 2024, Volume 66, Issue 12,Pages 2193

International Conference Physics.SPb/2024
Impurity centers and defects

Low-temperature luminescence study of the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes

V. Yu. Davydov^a, A. N. Smirnov^a, I. A. Eliseyev^a, A. A. Lebedev^a, M. E. Levinshteĭn^a, V. V. Kozlovsky^ab

^a Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

Abstract: The effect of electron and proton irradiation temperature on the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes was studied using low-temperature photoluminescence spectroscopy. It has been established that the temperature at which irradiation is carried out significantly affects the formation of radiation defects in the base layer of $n$-$4H$-$\mathrm{SiC}$ diodes. This observation is in good agreement with the results of changes in the electrical properties of the same samples under the influence of proton and electron irradiation.

Keywords: $4H$-$\mathrm{SiC}$ Schottky diode, proton irradiation, electron irradiation, photoluminescence, electrical properties.

Received: 30.04.2024
Revised: 28.10.2024
Accepted: 30.10.2024

DOI: 10.61011/FTT.2024.12.59593.6589PA