Abstract:
Magnesium diffusion in dislocation-free Czochralski silicon (CzSi) with oxygen concentration $\sim$(1.2–1.6) $\cdot$ 10$^{17}$ cm$^{-3}$ was studied. The temperature dependence of the magnesium diffusion coefficient was compared with the data obtained earlier in Cz-Si with a higher oxygen concentration $\sim$(3–4) $\cdot$10$^{17}$ cm$^{-3}$. Diffusion coefficient values measured at temperatures $T$ = 1100–1250$^\circ$C were found to be larger in silicon with lower oxygen concentration. The experimental data were processed in the frame of the trap-limited diffusion model, in which diffusion retardation occurs as a result of trapping of interstitial Mg atoms by oxygen-related centers. The trap binding energy was determined to be $\sim$2.2 eV.
Keywords:Czochralskii silicon, magnesium, diffusion, deep donors.
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