XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11-15, 2024
Superconductivity

Adjusting the parameters of the tunnel barrier of the SIS junction by varying the composition of the top electrode

A. M. Chekushkin, M. E. Paramonov, V. P. Koshelets

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia

Abstract: The influence of the top niobium nitride electrode in a Nb|Al-AlN|NbN multilayer structure on the parameters of the tunnel barrier (AlN) was studied. It has been shown that an increase in the nitrogen concentration in the Ar/N$_2$ gas mixture during the formation of NbN by magnetron sputtering leads to a decrease in the tunneling transparency of the AlN barrier.

Keywords: superconducting structures, tunneling junctions superconductor-isolator-superconductor, tunneling junction AlN, plasma chemical etching.

Received: 18.04.2024
Revised: 18.04.2024
Accepted: 08.05.2024

DOI: 10.61011/FTT.2024.07.58370.39HH

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