XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11-15, 2024
Magnetism, spintronics

Investigation of the sensitivity of a TMR sensor based on magnetic tunnel junctions with uniaxial crystalline anisotropy in the free layer

M. D. Lobkova^a, P. N. Skirdkov^ab, K. A. Zvezdin<sup>a

a</sup> New Spintronic Technologies, Russian Quantum Center, Skolkovo Innovation Center, Moscow Region, Moscow, Russia
^b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia

Abstract: An approach to designing a tunnel magnetoresistive sensor based on magnetic tunnel junctions with uniaxial crystalline anisotropy in the free layer is presented. A detailed study of the influence of the shape, tunnel magnetoresistance and anisotropy field on the sensitivity and transfer characteristics of the TMR-sensor is performed.

Keywords: magnetic tunnel junction, MTJ, TMR-sensor, sensitivity of TMR-sensor, spintronics, spintronic sensor.

Received: 18.04.2024
Revised: 18.04.2024
Accepted: 08.05.2024

DOI: 10.61011/FTT.2024.06.58240.29HH

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