XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11-15, 2024
Metals

Control of a SOT-MRAM cell by external magnetic field and current

N. V. Ostrovskaya, V. A. Skidanov, I. A. Iusipova

Institute for Design Problems in Microelectronics of Russian Academy of Sciences, Zelenograd, Moscow, Russia

Abstract: A dynamic system has been constructed that describes the dynamics of magnetization in a magnetic random-access memory element based on the spin Hall effect. The configuration of a cell with perpendicular anisotropy of the active layer and the dynamics of magnetization in the layer under the influence of charge-current pulses and an external magnetic field are considered. A qualitative analysis of the dynamic system was carried out. The equilibrium states of the system are identified and a classification of the main dynamic modes is carried out. The critical value of the switching current is calculated.

Keywords: spintronics, orbitronics, magnetization, Landau–Lifshitz–Hilbert equation, spin Hall effect, spin current, charge current, spin torque.

Received: 18.04.2024
Revised: 18.04.2024
Accepted: 08.05.2024

DOI: 10.61011/FTT.2024.06.58230.31HH

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