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Fizika Tverdogo Tela, 2024 Volume 66, Issue 5, Pages 699–702 (Mi ftt10301)

Semiconductors

Kinetic characteristics of the heterogeneous alloy Cd$_3$As$_2$(MnAs)$_{0.03}$ at high pressure

L. A. Saypulaevaa, A. I. Rilb, S. F. Marenkinb, Sh. B. Abdulvagidova, U. Z. Zalibekova

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
b Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia

Abstract: The paper presents the results of an experimental study of the electrical resistivity $\rho(P)$, the Hall coefficient R$_{\mathrm{H}}(P)$ and the transverse magnetoresistance $\Delta\rho_{xx}/\rho_0(P)$ of the heterogeneous alloy Cd$_3$As$_2$(MnAs)$_{0.03}$ at hydrostatic pressure up to 9 GPa at room temperature. Features of the behavior of $\rho(P)$, R$_{\mathrm{H}}(P)$ and $\Delta\rho_{xx}/\rho_0(P)$ Cd$_3$As$_2$(MnAs)$_{0.03}$, which are associated with phase transitions in Cd$_3$As$_2$ and MnAs, were observed in the pressure range $P\approx$ (1.6–2.7) GPa. Maxima of negative and positive magnetoresistance (MR) discovered during measurements of MR with increasing and decreasing pressure. With increasing magnetic field, a significant increase in negative MR is observed. In the pressure region of 1.6–2.8 GPa, the maximum negative MC $\approx$ 10% was observed at $P\approx$ 2.2 GPa.

Keywords: high pressure, resistivity, Hall coefficient, magnetoresistance, phase transition.

Received: 20.03.2024
Revised: 26.03.2024
Accepted: 27.03.2024

DOI: 10.61011/FTT.2024.05.58074.62



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