Abstract:
The development of reliable optoelectronic memristors is crucial for the successful development of neuromorphic systems, however, existing devices suffer from uncontrolled dynamics of ion migration resulting in the unpredictable resistive switching parameters. Structures were obtained in this paper using nanocrystals of inorganic perovskites – quantum dots CsPbBr$_3$(I$_3$), films of conjugated polymer poly(3-hexylthiophene) (P3HT) and a fullerene derivative [60]PCBM. The morphology and optoelectronic properties of the sandwich structures obtained were studied. It was found that the obtained samples demonstrate a memory effect at 300 K consisting in switching from a high- to a low-resistive state when voltage is applied. The nature of the memory effect observed in such structures associated with the capture of charge carriers by traps is discussed, as well as the prospects for using such materials in neuromorphic interfaces and for the manufacture of memory cells – memristors.
Keywords:inorganic perovskites, transport mechanisms, resistive switching, memristors, conductive polymers.
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