Semiconductors

Magnetotransport properties of a"'- (Cd$_{0.5}$Zn$_{0.5}$)$_3$As$_2$ single crystals subjected to hydrostatic pressure

L. A. Saypulaeva^a, V. S. Zakhvalinskii^b, A. G. Alibekov^a, Z. Sh. Pirmagomedov^a, A. V. Kochura^c, S. F. Marenkin^d, A. I. Ril<sup>d

a</sup> Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
^b National Research University "Belgorod State University", Belgorod, Russia
^c Southwest State University, Kursk, Russia
^d Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia

Abstract: In a"'- (Cd$_{0.5}$Zn$_{0.5}$)$_3$As$_2$, the effect of high hydrostatic pressure up to $9$ GPa on the transport and field dependence of the transverse magnetoresistance has been investigated. This structure is tetragonal (p. g. $I4_1$ /amd) with parameters $a=b= 8.55 \mathring{\mathrm{A}}$ and $c = 24.13\mathring{\mathrm{A}}$. A Toroid-type chamber was used to generate high pressure. It is shown that increasing the pressure leads to suppression of positive magnetoresistance. In the phase transition region, the negative magnetoresistance at pressure $P\approx5.4$ GPa in a $5$ kOe field takes a minimum value approximately equal to $-0.15$.

Keywords: high pressure, semiconductor, specific electrical resistance, Hall coefficient, magnetoresistance.

Received: 25.11.2023
Revised: 25.11.2023
Accepted: 27.11.2023

DOI: 10.61011/FTT.2024.01.56934.264

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